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  p p j p 10 na 6 5 / pj f 10 na 6 5 march 10,2014 - rev.00 page 1 6 5 0 v n - c hannel mosfet v oltage 6 5 0 v c urrent 10 a ito - 220ab - f to - 220ab f eatures ? r ds(on) , v gs @10v,i d @ 5 a < 1 ? high switching speed ? improved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance with eu rohs 2011/65/eu directive . ? green molding compound as p er iec61249 std. (halogen free) m echanical data ? case : to - 220ab, ito - 220ab - f package ? terminals : solderable per mil - std - 750, method 2026 ? to - 220 ab approx. weight : 0.06 7 ounces, 1.8 9 grams ? ito - 220ab - f approx. weight : 0.068 ounces, 2 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol to - 220ab ito - 220ab - f units drain - source voltage v d s 6 5 0 v gate - source voltage v gs + 30 v continuous drain current i d 10 a pulsed drain current i dm 40 a single pulse avalanche energy (note 1 ) e as 608 mj power dissipation t c =25 o c p d 156 50 w derate above 25 o c 1.25 0.4 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - junction to case - j unction to ambient r jc ja 0.8 62.5 2.5 120 o c /w ? limited only by maximum junction temperature
p p j p 10 na 6 5 / pj f 10 na 6 5 march 10,2014 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v ,i d =250ua 6 5 0 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 2.8 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 5 a - 0.8 8 1. 0 dss v ds = 6 5 0v,v gs =0v - 0.03 1 .0 ua gate - source leakage current i gss v gs = + 3 0v,v ds =0v - + 1 0 + 100 na diode forward voltage v sd i s = 10 a,v gs =0v - 0.9 1.4 v dynamic (note 4 ) total gate charge q g v ds = 520 v, i d = 10 a, v gs =10v (note 2,3 ) - 20 - nc gate - source charge q gs - 8 - gate - drain charge q gd - 7 - input capacitance ciss v ds =2 5v, v gs =0v, f=1.0mhz - 1 20 0 - pf output capacitance coss - 1 40 - reverse transfer capacitance crss - 4 - switching turn - on delay time td (on) v dd = 325 v, i d = 10 a, r g = 25 (note 2,3 ) - 40 - ns turn - on rise time t r - 7 4 - turn - off delay time td (off) - 52 - turn - off fall time t f - 35 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 10 a maximum pulsed drain - source diode for ward current i sm --- - - 40 a reverse recovery time trr v gs =0v, i s = 10 a di f / dt=100a/us (note 2 ) - 57 0 - ns reverse recovery charge qrr - 4. 7 - uc notes : 1. l=30mh, i as = 6. 2 a, v dd = 5 0 v, r g =2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essential ly independent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p j p 10 na 6 5 / pj f 10 na 6 5 march 10,2014 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 source - drain diode forward voltage fig. 5 capacitance vs. drain - source voltage fig. 6 gate charge
p p j p 10 na 6 5 / pj f 10 na 6 5 march 10,2014 - rev.00 page 4 t ypical characteristic curves fig. 7 bv dss vs. junction temperature fig. 8 on - resistance vs. junction tempera ture fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area
p p j p 10 na 6 5 / pj f 10 na 6 5 march 10,2014 - rev.00 page 5 t ypical characteristic curves fig. 13 PJP10NA65 normalized transient thermal impedance vs. pulse width fig. 14 pjf10 na 65 normalized transient thermal impedance vs. pulse width
p p j p 10 na 6 5 / pj f 10 na 6 5 march 10,2014 - rev.00 page 6 packaging information . ito - 220ab - f dimension u nit: mm to - 220 ab dimension u nit: mm
p p j p 10 na 6 5 / pj f 10 na 6 5 march 10,2014 - rev.00 page 7 part no packing code version part n o packing code package type packing type marking ver sion pj p10na65 _t0_00001 to - 220 ab 50pcs / tube p10na65 halogen free pj f10na65 _t0_00001 ito - 220ab - f 50pcs / tube f10na65 halogen free
p p j p 10 na 6 5 / pj f 10 na 6 5 march 10,2014 - rev.00 page 8 disclaimer


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